The Helios NanoLab™ 660 features FEI’s most recent advances in field emission SEM (FESEM) and focused ion beam (FIB) technologies and their combined use. As FEI’s 11th DualBeam™ platform, it is designed to access a new world of extreme high resolution (XHR) 2D and 3D characterization, nanoprototyping, and highest quality sample preparation. Point resolution: 0.6nm at 20kV.
The key benefits include:
- XHR with sub-nanometer resolution from 500 V to 30 kV;
- Sharp, refined, and charge-free contrast;
- Shortest time to precise cross-sectioning;
- High productivity preparation of the thinnest samples;
Manufacturing & Analysis
- Precise Cutting: Minimum etched line width Si (~40 nm)
- Specific Pattern Defined
- Selective Deposition
- Enhanced Etching/Selective Etching
- TEM Specimen Preparation
- Qualitative and Quantitative Analysis of Elemental Composition
Specification
- E-Beam resolution:
0.8 nm @30 kV; 0.9 nm @1 kV - Ion-Beam resolution:
4 nm @30 kV - Landing voltage range
I-beam：500V-30kV
E-beam：20V-30kV - Probe current
I-beam: 0.1 pA - 65 nA
E-beam: 0.8 pA -100 nA - Stage dimension
XY: 150 mm, piezo-driven
Z: 10 mm motorized
T: - 10° to + 60°
R: n x 360°, piezo-driven