FEI Helios NanoLab 660

Photo of FEI Helios FIB/SEM 660 The Helios NanoLab™ 660 features FEI’s most recent advances in field emission SEM (FESEM) and focused ion beam (FIB) technologies and their combined use. As FEI’s 11th DualBeam™ platform, it is designed to access a new world of extreme high resolution (XHR) 2D and 3D characterization, nanoprototyping, and highest quality sample preparation. Point resolution: 0.6nm at 20kV.

The key benefits include:
  • XHR with sub-nanometer resolution from 500 V to 30 kV;
  • Sharp, refined, and charge-free contrast;
  • Shortest time to precise cross-sectioning;
  • High productivity preparation of the thinnest samples;
Standard Operating Procedure (.pdf)

Manufacturing & Analysis

  • Precise Cutting: Minimum etched line width Si (~40 nm)
  • Specific Pattern Defined
  • Selective Deposition
  • Enhanced Etching/Selective Etching
  • TEM Specimen Preparation
  • Qualitative and Quantitative Analysis of Elemental Composition


  • E-Beam resolution:
    0.8 nm @30 kV;   0.9 nm @1 kV
  • Ion-Beam resolution:
    4 nm @30 kV
  • Landing voltage range
  • Probe current
    I-beam: 0.1 pA - 65 nA
    E-beam: 0.8 pA -100 nA
  • Stage dimension
    XY: 150 mm, piezo-driven
    Z: 10 mm motorized
    T: - 10° to + 60°
    R: n x 360°, piezo-driven